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Hydrodynamic study of terahertz three-dimensional plasma resonances in InGaAs diodes

Identifieur interne : 003F85 ( Main/Repository ); précédent : 003F84; suivant : 003F86

Hydrodynamic study of terahertz three-dimensional plasma resonances in InGaAs diodes

Auteurs : RBID : Pascal:10-0369041

Descripteurs français

Pascal (Inist)
- Oscillation, Plasmon, Dépendance temps, Modèle hydrodynamique, Autocohérence, Photoexcitation, Fréquence résonance, Effet champ électrique, Dopage, Gallium Indium Arséniure Mixte, Jonction n n+, Dépendance fréquence, Domaine fréquence THz, InGaAs.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Doping, Electric field effects, Frequency dependence, Gallium Indium Arsenides Mixed, Hydrodynamic model, Oscillations, Photoexcitation, Plasmons, Resonance frequency, Self consistency, THz range, Time dependence, n n+ junction.

Abstract

Using a hydrodynamic model self-consistently coupled to a Poisson solver, we investigate the time and frequency response of InGaAs diodes excited at room temperature by an optical photoexcitation presenting a beating in the terahertz frequency domain. The analysis of the main physical quantities, such as the local electric field and the conduction current density, evidences the presence of strong resonances that are interpreted as three-dimensional plasma oscillations excited by the optical beating. By studying the influence of the geometry and doping of the diode, it is shown that, in most cases, the highly doped contacts mainly control the frequency of the plasma mode while the diode length is a crucial parameter to evidence a second resonance related to the diode active region. Moreover, the amplitude of the plasma resonances can be enhanced at high doping levels and by increasing the level of the optical photoexcitation.

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Pascal:10-0369041

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<author><name sortKey="Marinchio, H" uniqKey="Marinchio H">H. Marinchio</name>
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<term>Oscillations</term>
<term>Photoexcitation</term>
<term>Plasmons</term>
<term>Resonance frequency</term>
<term>Self consistency</term>
<term>THz range</term>
<term>Time dependence</term>
<term>n n+ junction</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Oscillation</term>
<term>Plasmon</term>
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<term>Modèle hydrodynamique</term>
<term>Autocohérence</term>
<term>Photoexcitation</term>
<term>Fréquence résonance</term>
<term>Effet champ électrique</term>
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<front><div type="abstract" xml:lang="en">Using a hydrodynamic model self-consistently coupled to a Poisson solver, we investigate the time and frequency response of InGaAs diodes excited at room temperature by an optical photoexcitation presenting a beating in the terahertz frequency domain. The analysis of the main physical quantities, such as the local electric field and the conduction current density, evidences the presence of strong resonances that are interpreted as three-dimensional plasma oscillations excited by the optical beating. By studying the influence of the geometry and doping of the diode, it is shown that, in most cases, the highly doped contacts mainly control the frequency of the plasma mode while the diode length is a crucial parameter to evidence a second resonance related to the diode active region. Moreover, the amplitude of the plasma resonances can be enhanced at high doping levels and by increasing the level of the optical photoexcitation.</div>
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<fC01 i1="01" l="ENG"><s0>Using a hydrodynamic model self-consistently coupled to a Poisson solver, we investigate the time and frequency response of InGaAs diodes excited at room temperature by an optical photoexcitation presenting a beating in the terahertz frequency domain. The analysis of the main physical quantities, such as the local electric field and the conduction current density, evidences the presence of strong resonances that are interpreted as three-dimensional plasma oscillations excited by the optical beating. By studying the influence of the geometry and doping of the diode, it is shown that, in most cases, the highly doped contacts mainly control the frequency of the plasma mode while the diode length is a crucial parameter to evidence a second resonance related to the diode active region. Moreover, the amplitude of the plasma resonances can be enhanced at high doping levels and by increasing the level of the optical photoexcitation.</s0>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Gallium Indium Arsenides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
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<s2>NC</s2>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
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<s4>INC</s4>
<s5>52</s5>
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Hydrodynamic study of terahertz three-dimensional plasma resonances in InGaAs diodes

Hydrodynamic study of terahertz three-dimensional plasma resonances in InGaAs diodes

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri